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MegaMOSTMFET IXTH / IXTM 67N10 IXTH / IXTM 75N10 N-Channel Enhancement Mode VDSS 100 V 100 V ID25 RDS(on) 67 A 25 m 75 A 20 m Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C 67N10 75N10 67N10 75N10 Maximum Ratings 100 100 20 30 67 75 268 300 300 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C TO-247 AD (IXTH) D (TAB) TO-204 AE (IXTM) D G = Gate, S = Source, G D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 100 2 4 100 TJ = 25C TJ = 125C 200 1 0.025 0.020 V Applications Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers l VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 nA A mA Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density l IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved l l 67N10 75N10 Pulse test, t 300 s, duty cycle d 2 % l V l l l l l l 91533E(5/96) 1-4 IXTH 67N10 IXTM 67N10 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 30 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 550 40 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 60 100 30 180 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 30 90 60 110 140 60 260 70 160 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W 1 IXTH 75N10 IXTM 75N10 TO-247 AD (IXTH) Outline gfs C iss C oss C rss t d(on) tr td(off) tf Q g(on) Q gs Q gd R thJC R thCK VDS = 10 V; ID = 0.5 ID25, pulse test 2 3 Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 67N10 75N10 67N10 75N10 67 75 268 300 1.75 300 A A A A V ns Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-204AE (IXTM) Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V Pins 1 - Gate 2 - Source Case - Drain Dim. A A1 b D e e1 Millimeter Min. Max. 6.4 11.4 1.53 3.42 1.45 1.60 22.22 10.67 11.17 5.21 5.71 Inches Min. Max. .250 .450 .060 .135 .057 .063 .875 .420 .440 .205 .225 .440 .151 .151 1.187 .495 .131 .655 .480 .165 .165 BSC .525 .188 .675 L 11.18 12.19 p 3.84 4.19 p 1 3.84 4.19 q 30.15 BSC R 12.58 13.33 R1 3.33 4.77 s 16.64 17.14 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTH 67N10 IXTM 67N10 IXTH 75N10 IXTM 75N10 Fig. 1 Output Characteristics 200 TJ = 25C VGS = 10V 9V Fig. 2 Input Admittance 150 125 150 ID - Amperes 8V ID - Amperes 100 75 50 25 0 0 1 2 3 4 5 6 7 8 9 10 TJ = 125C 100 7V 6V 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5V TJ = 25C VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current 1.4 TJ = 25C Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 1.3 RDS(on) - Normalized RDS(on) - Normalized 2.00 1.75 1.50 ID = 37.5A 1.2 VGS = 10V 1.1 1.0 VGS = 15V 1.25 1.00 0.75 0.9 0.8 0 20 40 60 80 100 120 140 160 0.50 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 80 75N10 67N10 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 1.1 VGS(th) BVDSS 60 BV/VG(th) - Normalized 50 75 100 125 150 ID - Amperes 1.0 0.9 0.8 0.7 0.6 40 20 0 -50 -25 0 25 0.5 -50 -25 0 25 50 75 100 125 150 TC - Degrees C TJ - Degrees C (c) 2000 IXYS All rights reserved 3-4 IXTH 67N10 IXTM 67N10 IXTH 75N10 IXTM 75N10 Fig.7 Gate Charge Characteristic Curve 10 9 8 7 VDS = 50V ID = 37.5A IG = 1mA Fig.8 Forward Bias Safe Operating Area 10s 100s Limited by RDS(on) 100 6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200 ID - Amperes VGS - Volts 1ms 10 10ms 100ms 1 1 10 100 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 6000 5000 Fig.10 Source Current vs. Source to Drain Voltage 150 125 Capacitance - pF 3000 2000 1000 0 0 5 f = 1MHz VDS = 25V Coss IS - Amperes 4000 Ciss 100 75 50 TJ = 125C 25 Crss TJ = 25C 10 15 20 25 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 VDS - Volts VSD - Volt Fig.11 Transient Thermal Impedance Thermal Response - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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